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SIE802DF-T1-E3


Part Number SIE802DF-T1-E3
Zouser Part # SIE802DF-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 60A 10-POLARPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIE802DF-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock417 - More on Order
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Lead-TimeCan Ship Immediately
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SIE802DF-T1-E3 Specifications

Part Number SIE802DF-T1-E3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 23.6A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)

SIE802DF-T1-E3 Documents

SIE802DF-T1-E3, SIE802DF-T1-E3 Datasheet (Total Pages: 10, Size: 191.73 KB)
SIE802DF-T1-GE3 Datasheet CoverSIE802DF-T1-GE3 Datasheet Page 2SIE802DF-T1-GE3 Datasheet Page 3SIE802DF-T1-GE3 Datasheet Page 4SIE802DF-T1-GE3 Datasheet Page 5SIE802DF-T1-GE3 Datasheet Page 6SIE802DF-T1-GE3 Datasheet Page 7SIE802DF-T1-GE3 Datasheet Page 8SIE802DF-T1-GE3 Datasheet Page 9SIE802DF-T1-GE3 Datasheet Page 10

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