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SIE876DF-T1-GE3


Part Number SIE876DF-T1-GE3
Zouser Part # SIE876DF-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 60A POLARPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SIE876DF-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SIE876DF-T1-GE3 Specifications

Part Number SIE876DF-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 30V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)

SIE876DF-T1-GE3 Documents

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