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SIHA4N80E-GE3


Part Number SIHA4N80E-GE3
Zouser Part # SIHA4N80E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHAN 800V FP TO-220
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHA4N80E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock1,665 - More on Order
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SIHA4N80E-GE3 Specifications

Part Number SIHA4N80E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series E
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 622pF @ 100V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack

SIHA4N80E-GE3 Documents

SIHA4N80E-GE3, SIHA4N80E-GE3 Datasheet (Total Pages: 8, Size: 146.7 KB)
SIHA4N80E-GE3 Datasheet CoverSIHA4N80E-GE3 Datasheet Page 2SIHA4N80E-GE3 Datasheet Page 3SIHA4N80E-GE3 Datasheet Page 4SIHA4N80E-GE3 Datasheet Page 5SIHA4N80E-GE3 Datasheet Page 6SIHA4N80E-GE3 Datasheet Page 7SIHA4N80E-GE3 Datasheet Page 8

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