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SIHD3N50D-GE3


Part Number SIHD3N50D-GE3
Zouser Part # SIHD3N50D-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 500V 3A TO252 DPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHD3N50D-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock2,130 - More on Order
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SIHD3N50D-GE3 Specifications

Part Number SIHD3N50D-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD3N50D-GE3 Documents

SIHD3N50D-GE3, SIHD3N50D-GE3 Datasheet (Total Pages: 9, Size: 187.05 KB)
SIHD3N50DT4-GE3 Datasheet CoverSIHD3N50DT4-GE3 Datasheet Page 2SIHD3N50DT4-GE3 Datasheet Page 3SIHD3N50DT4-GE3 Datasheet Page 4SIHD3N50DT4-GE3 Datasheet Page 5SIHD3N50DT4-GE3 Datasheet Page 6SIHD3N50DT4-GE3 Datasheet Page 7SIHD3N50DT4-GE3 Datasheet Page 8SIHD3N50DT4-GE3 Datasheet Page 9

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