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SIHP11N80E-GE3


Part Number SIHP11N80E-GE3
Zouser Part # SIHP11N80E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 12A TO220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHP11N80E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock491 - More on Order
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SIHP11N80E-GE3 Specifications

Part Number SIHP11N80E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series E
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

SIHP11N80E-GE3 Documents

SIHP11N80E-GE3, SIHP11N80E-GE3 Datasheet (Total Pages: 7, Size: 125.11 KB)
SIHP11N80E-GE3 Datasheet CoverSIHP11N80E-GE3 Datasheet Page 2SIHP11N80E-GE3 Datasheet Page 3SIHP11N80E-GE3 Datasheet Page 4SIHP11N80E-GE3 Datasheet Page 5SIHP11N80E-GE3 Datasheet Page 6SIHP11N80E-GE3 Datasheet Page 7

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