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SIHU3N50D-GE3


Part Number SIHU3N50D-GE3
Zouser Part # SIHU3N50D-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 500V 3A TO251 IPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHU3N50D-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock309 - More on Order
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SIHU3N50D-GE3 Specifications

Part Number SIHU3N50D-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

SIHU3N50D-GE3 Documents

SIHU3N50D-GE3, SIHU3N50D-GE3 Datasheet (Total Pages: 8, Size: 182.14 KB)
SIHU3N50D-E3 Datasheet CoverSIHU3N50D-E3 Datasheet Page 2SIHU3N50D-E3 Datasheet Page 3SIHU3N50D-E3 Datasheet Page 4SIHU3N50D-E3 Datasheet Page 5SIHU3N50D-E3 Datasheet Page 6SIHU3N50D-E3 Datasheet Page 7SIHU3N50D-E3 Datasheet Page 8

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