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SIHW47N60E-GE3


Part Number SIHW47N60E-GE3
Zouser Part # SIHW47N60E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 47A TO-247AD
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHW47N60E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock902 - More on Order
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SIHW47N60E-GE3 Specifications

Part Number SIHW47N60E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 100V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-3P-3 Full Pack

SIHW47N60E-GE3 Documents

SIHW47N60E-GE3, SIHW47N60E-GE3 Datasheet (Total Pages: 8, Size: 237.56 KB)
SIHW47N60E-GE3 Datasheet CoverSIHW47N60E-GE3 Datasheet Page 2SIHW47N60E-GE3 Datasheet Page 3SIHW47N60E-GE3 Datasheet Page 4SIHW47N60E-GE3 Datasheet Page 5SIHW47N60E-GE3 Datasheet Page 6SIHW47N60E-GE3 Datasheet Page 7SIHW47N60E-GE3 Datasheet Page 8

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