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SPB35N10 G


Part Number SPB35N10 G
Zouser Part # SPB35N10-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 35A D2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SPB35N10 G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock502 - More on Order
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SPB35N10 G Specifications

Part Number SPB35N10 G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB35N10 G Documents

SPB35N10 G, SPB35N10 G Datasheet (Total Pages: 8, Size: 486.6 KB)
SPB35N10 G Datasheet CoverSPB35N10 G Datasheet Page 2SPB35N10 G Datasheet Page 3SPB35N10 G Datasheet Page 4SPB35N10 G Datasheet Page 5SPB35N10 G Datasheet Page 6SPB35N10 G Datasheet Page 7SPB35N10 G Datasheet Page 8

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