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SPB80N06S2-08


Part Number SPB80N06S2-08
Zouser Part # SPB80N06S2-08
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 55V 80A D2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SPB80N06S2-08 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock586 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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SPB80N06S2-08 Specifications

Part Number SPB80N06S2-08
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
FET Feature -
Power Dissipation (Max) 215W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N06S2-08 Documents

SPB80N06S2-08, SPB80N06S2-08 Datasheet (Total Pages: 8, Size: 563.73 KB)
SPP80N06S2-08 Datasheet CoverSPP80N06S2-08 Datasheet Page 2SPP80N06S2-08 Datasheet Page 3SPP80N06S2-08 Datasheet Page 4SPP80N06S2-08 Datasheet Page 5SPP80N06S2-08 Datasheet Page 6SPP80N06S2-08 Datasheet Page 7SPP80N06S2-08 Datasheet Page 8

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