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SPB80N10L G


Part Number SPB80N10L G
Zouser Part # SPB80N10L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 80A TO-263
Lifecycle Discontinued
RoHS No RoHS Information
EDA/CAD Models SPB80N10L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock429 - More on Order
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Lead-TimeCan Ship Immediately
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SPB80N10L G Specifications

Part Number SPB80N10L G
Brand Infineon Technologies
Lifecycle Discontinued
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4540pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N10L G Documents

SPB80N10L G, SPB80N10L G Datasheet (Total Pages: 8, Size: 108.75 KB)
SPB80N10L G Datasheet CoverSPB80N10L G Datasheet Page 2SPB80N10L G Datasheet Page 3SPB80N10L G Datasheet Page 4SPB80N10L G Datasheet Page 5SPB80N10L G Datasheet Page 6SPB80N10L G Datasheet Page 7SPB80N10L G Datasheet Page 8

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