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SPD35N10
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SPD35N10


Part Number SPD35N10
Zouser Part # SPD35N10
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 35A DPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SPD35N10 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock333 - More on Order
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SPD35N10 Specifications

Part Number SPD35N10
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

SPD35N10 Documents

SPD35N10, SPD35N10 Datasheet (Total Pages: 8, Size: 556.03 KB)
SPD35N10 Datasheet CoverSPD35N10 Datasheet Page 2SPD35N10 Datasheet Page 3SPD35N10 Datasheet Page 4SPD35N10 Datasheet Page 5SPD35N10 Datasheet Page 6SPD35N10 Datasheet Page 7SPD35N10 Datasheet Page 8

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