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SUP60030E-GE3


Part Number SUP60030E-GE3
Zouser Part # SUP60030E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 80V 120A TO220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SUP60030E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock837 - More on Order
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SUP60030E-GE3 Specifications

Part Number SUP60030E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7910pF @ 40V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

SUP60030E-GE3 Documents

SUP60030E-GE3, SUP60030E-GE3 Datasheet (Total Pages: 8, Size: 147.15 KB)
SUP60030E-GE3 Datasheet CoverSUP60030E-GE3 Datasheet Page 2SUP60030E-GE3 Datasheet Page 3SUP60030E-GE3 Datasheet Page 4SUP60030E-GE3 Datasheet Page 5SUP60030E-GE3 Datasheet Page 6SUP60030E-GE3 Datasheet Page 7SUP60030E-GE3 Datasheet Page 8

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