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TH58BVG2S3HBAI4


Part Number TH58BVG2S3HBAI4
Zouser Part # TH58BVG2S3HBAI4
Manufacturer Toshiba Memory America, Inc.
Category SemiconductorsMemory ICsMemory
Description 4GB SLC BENAND 24NM BGA 9X11 (EE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TH58BVG2S3HBAI4 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock599 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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TH58BVG2S3HBAI4 Specifications

Part Number TH58BVG2S3HBAI4
Brand Toshiba Memory America, Inc.
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Memory ICs
Subcategory Memory
Manufacturer Toshiba Memory America, Inc.
Series Benand™
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 4Gb (512M x 8)
Memory Interface -
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)

TH58BVG2S3HBAI4 Documents

TH58BVG2S3HBAI4, TH58BVG2S3HBAI4 Datasheet (Total Pages: 51, Size: 1,243.01 KB)
TH58BVG2S3HBAI4 Datasheet CoverTH58BVG2S3HBAI4 Datasheet Page 2TH58BVG2S3HBAI4 Datasheet Page 3TH58BVG2S3HBAI4 Datasheet Page 4TH58BVG2S3HBAI4 Datasheet Page 5TH58BVG2S3HBAI4 Datasheet Page 6TH58BVG2S3HBAI4 Datasheet Page 7TH58BVG2S3HBAI4 Datasheet Page 8TH58BVG2S3HBAI4 Datasheet Page 9TH58BVG2S3HBAI4 Datasheet Page 10TH58BVG2S3HBAI4 Datasheet Page 11TH58BVG2S3HBAI4 Datasheet Page 12TH58BVG2S3HBAI4 Datasheet Page 13TH58BVG2S3HBAI4 Datasheet Page 14

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