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TH58BYG2S3HBAI6 |
|
| Part Number | TH58BYG2S3HBAI6 |
| Zouser Part # | TH58BYG2S3HBAI6 |
| Manufacturer | Toshiba Memory America, Inc. |
| Category | Semiconductors › Memory ICs › Memory |
| Description | IC FLASH 4G PARALLEL 67VFBGA |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TH58BYG2S3HBAI6 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 750 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
TH58BYG2S3HBAI6 Specifications
| Part Number | TH58BYG2S3HBAI6 | |
| Brand | Toshiba Memory America, Inc. | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Memory ICs | |
| Subcategory | Memory | |
| Manufacturer | Toshiba Memory America, Inc. | |
| Series | Benand™ | |
| Memory Type | Non-Volatile | |
| Memory Format | FLASH | |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) | |
| Memory Interface | Parallel | |
| Clock Frequency | - | |
| Write Cycle Time - Word, Page | 25ns | |
| Access Time | 25ns | |
| Voltage - Supply | 1.7V ~ 1.95V | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Mounting Type | Surface Mount | |
| Package / Case | 67-VFBGA | |
| Supplier Device Package | 67-VFBGA (6.5x8) |
TH58BYG2S3HBAI6 Documents
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