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TJ8S06M3L(T6L1,NQ)


Part Number TJ8S06M3L(T6L1,NQ)
Zouser Part # TJ8S06M3L-T6L1-NQ
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 60V 8A DPAK-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TJ8S06M3L(T6L1,NQ) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock670 - More on Order
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TJ8S06M3L(T6L1,NQ) Specifications

Part Number TJ8S06M3L(T6L1,NQ)
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 10V
FET Feature -
Power Dissipation (Max) 27W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

TJ8S06M3L(T6L1,NQ) Documents

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