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TJ8S06M3L(T6L1,NQ) |
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Part Number | TJ8S06M3L(T6L1,NQ) |
Zouser Part # | TJ8S06M3L-T6L1-NQ |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 60V 8A DPAK-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TJ8S06M3L(T6L1,NQ) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
In Stock | 670 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
TJ8S06M3L(T6L1,NQ) Specifications
Part Number | TJ8S06M3L(T6L1,NQ) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | U-MOSVI | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 104mOhm @ 4A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V | |
Vgs (Max) | +10V, -20V | |
Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 27W (Tc) | |
Operating Temperature | 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DPAK+ | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
TJ8S06M3L(T6L1,NQ) Documents
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