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TK10J80E,S1E


Part Number TK10J80E,S1E
Zouser Part # TK10J80E-S1E
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V TO-3PN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TK10J80E,S1E PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock300 - More on Order
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TK10J80E,S1E Specifications

Part Number TK10J80E,S1E
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVIII
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

TK10J80E,S1E Documents

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