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TK39J60W,S1VQ


Part Number TK39J60W,S1VQ
Zouser Part # TK39J60W-S1VQ
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 38.8A TO-3P
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TK39J60W,S1VQ PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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TK39J60W,S1VQ Specifications

Part Number TK39J60W,S1VQ
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
FET Feature Super Junction
Power Dissipation (Max) 270W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

TK39J60W,S1VQ Documents

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