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TK4A60DB(STA4,Q,M) |
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Part Number | TK4A60DB(STA4,Q,M) |
Zouser Part # | TK4A60DB-STA4-Q-M |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V 3.7A TO-220SIS |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TK4A60DB(STA4,Q,M) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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Payment
Quick Inquiry
In Stock | 381 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
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1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
TK4A60DB(STA4,Q,M) Specifications
Part Number | TK4A60DB(STA4,Q,M) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | π-MOSVII | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 1.9A, 10V | |
Vgs(th) (Max) @ Id | 4.4V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 35W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220SIS | |
Package / Case | TO-220-3 Full Pack |
TK4A60DB(STA4,Q,M) Documents
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