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TK55D10J1(Q)


Part Number TK55D10J1(Q)
Zouser Part # TK55D10J1-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 55A TO220W
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models TK55D10J1(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock643 - More on Order
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Lead-TimeTo be Confirmed
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TK55D10J1(Q) Specifications

Part Number TK55D10J1(Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 10V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220(W)
Package / Case TO-220-3

TK55D10J1(Q) Documents

TK55D10J1(Q), TK55D10J1(Q) Datasheet (Total Pages: 6, Size: 173.1 KB)
TK55D10J1(Q) Datasheet CoverTK55D10J1(Q) Datasheet Page 2TK55D10J1(Q) Datasheet Page 3TK55D10J1(Q) Datasheet Page 4TK55D10J1(Q) Datasheet Page 5TK55D10J1(Q) Datasheet Page 6

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