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TK8R2A06PL,S4X
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TK8R2A06PL,S4X


Part Number TK8R2A06PL,S4X
Zouser Part # TK8R2A06PL-S4X
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description X35 PB-F POWER MOSFET TRANSISTOR
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TK8R2A06PL,S4X PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock1,004 - More on Order
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Lead-TimeTo be Confirmed
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TK8R2A06PL,S4X Specifications

Part Number TK8R2A06PL,S4X
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.4mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 28.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

TK8R2A06PL,S4X Documents

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