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TPC8022-H(TE12LQ,M
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TPC8022-H(TE12LQ,M


Part Number TPC8022-H(TE12LQ,M
Zouser Part # TPC8022-H-TE12LQ-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 40V 7.5A SOP8 2-6J1B
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models TPC8022-H(TE12LQ,M PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock206 - More on Order
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TPC8022-H(TE12LQ,M Specifications

Part Number TPC8022-H(TE12LQ,M
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 10V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP (5.5x6.0)
Package / Case 8-SOIC (0.173", 4.40mm Width)

TPC8022-H(TE12LQ,M Documents

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