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TPC8113(TE12L,Q)
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TPC8113(TE12L,Q)


Part Number TPC8113(TE12L,Q)
Zouser Part # TPC8113-TE12L-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 30V 11A SOP8 2-6J1B
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models TPC8113(TE12L,Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock240 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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TPC8113(TE12L,Q) Specifications

Part Number TPC8113(TE12L,Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 10V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP (5.5x6.0)
Package / Case 8-SOIC (0.173", 4.40mm Width)

TPC8113(TE12L,Q) Documents

TPC8113(TE12L, TPC8113(TE12L Datasheet (Total Pages: 7, Size: 214.94 KB)
TPC8113(TE12L Datasheet CoverTPC8113(TE12L Datasheet Page 2TPC8113(TE12L Datasheet Page 3TPC8113(TE12L Datasheet Page 4TPC8113(TE12L Datasheet Page 5TPC8113(TE12L Datasheet Page 6TPC8113(TE12L Datasheet Page 7

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