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TPC8A02-H(TE12L,Q)


Part Number TPC8A02-H(TE12L,Q)
Zouser Part # TPC8A02-H-TE12L-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 16A SOP8 2-6J1B
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models TPC8A02-H(TE12L,Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock428 - More on Order
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TPC8A02-H(TE12L,Q) Specifications

Part Number TPC8A02-H(TE12L,Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 10V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP (5.5x6.0)
Package / Case 8-SOIC (0.173", 4.40mm Width)

TPC8A02-H(TE12L,Q) Documents

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