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TPH2R306NH,L1Q
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TPH2R306NH,L1Q


Part Number TPH2R306NH,L1Q
Zouser Part # TPH2R306NH-L1Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N CH 60V 60A SOP ADV
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPH2R306NH,L1Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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TPH2R306NH,L1Q Specifications

Part Number TPH2R306NH,L1Q
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 30V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 78W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN

TPH2R306NH,L1Q Documents

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