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TPN22006NH,LQ |
|
| Part Number | TPN22006NH,LQ |
| Zouser Part # | TPN22006NH-LQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N CH 60V 9A 8-TSON |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TPN22006NH,LQ PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 179 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
TPN22006NH,LQ Specifications
| Part Number | TPN22006NH,LQ | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 30V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Package / Case | 8-PowerVDFN |
TPN22006NH,LQ Documents
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