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TPN4R712MD,L1Q |
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Part Number | TPN4R712MD,L1Q |
Zouser Part # | TPN4R712MD-L1Q |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 20V 36A 8TSON ADV |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TPN4R712MD,L1Q PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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In Stock | 6,758 - More on Order |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
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Price is not available, Please RFQQty. | Unit Price | Ext. Price |
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1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
TPN4R712MD,L1Q Specifications
Part Number | TPN4R712MD,L1Q | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | U-MOSVI | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 18A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 5V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 42W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
Package / Case | 8-PowerVDFN |
TPN4R712MD,L1Q Documents
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