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TPN4R712MD,L1Q
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TPN4R712MD,L1Q


Part Number TPN4R712MD,L1Q
Zouser Part # TPN4R712MD-L1Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 20V 36A 8TSON ADV
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPN4R712MD,L1Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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TPN4R712MD,L1Q Specifications

Part Number TPN4R712MD,L1Q
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN

TPN4R712MD,L1Q Documents

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