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TSM061NA03CV RGG


Part Number TSM061NA03CV RGG
Zouser Part # TSM061NA03CV-RGG
Manufacturer Taiwan Semiconductor Corporation
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 66A 8PDFN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TSM061NA03CV RGG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Feb 2 - Feb 7 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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TSM061NA03CV RGG Specifications

Part Number TSM061NA03CV RGG
Brand Taiwan Semiconductor Corporation
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Taiwan Semiconductor Corporation
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1136pF @ 15V
FET Feature -
Power Dissipation (Max) 44.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (3x3)
Package / Case 8-PowerWDFN

TSM061NA03CV RGG Documents

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