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TSM60NB190CM2 RNG


Part Number TSM60NB190CM2 RNG
Zouser Part # TSM60NB190CM2-RNG
Manufacturer Taiwan Semiconductor Corporation
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 18A TO263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TSM60NB190CM2 RNG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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TSM60NB190CM2 RNG Specifications

Part Number TSM60NB190CM2 RNG
Brand Taiwan Semiconductor Corporation
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Taiwan Semiconductor Corporation
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V
FET Feature -
Power Dissipation (Max) 150.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TSM60NB190CM2 RNG Documents

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