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VS-GB100TH120N
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VS-GB100TH120N


Part Number VS-GB100TH120N
Zouser Part # VS-GB100TH120N
Manufacturer Vishay Semiconductor Diodes Division
Category SemiconductorsTransistorsIGBTs - Modules
Description IGBT 1200V 200A 833W INT-A-PAK
Lifecycle Last Time Buy
RoHS No RoHS Information
EDA/CAD Models VS-GB100TH120N PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock472 - More on Order
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Lead-TimeTo be Confirmed
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VS-GB100TH120N Specifications

Part Number VS-GB100TH120N
Brand Vishay Semiconductor Diodes Division
Lifecycle Last Time Buy
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Modules
Manufacturer Vishay Semiconductor Diodes Division
Series -
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Power - Max 833W
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 8.58nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)
Supplier Device Package Double INT-A-PAK

VS-GB100TH120N Documents

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