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VS-GB100TP120N |
|
| Part Number | VS-GB100TP120N |
| Zouser Part # | VS-GB100TP120N |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Category | Semiconductors › Transistors › IGBTs - Modules |
| Description | IGBT 1200V 200A 650W INT-A-PAK |
| Lifecycle | Last Time Buy |
| RoHS | No RoHS Information |
| EDA/CAD Models | VS-GB100TP120N PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 224 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
VS-GB100TP120N Specifications
| Part Number | VS-GB100TP120N | |
| Brand | Vishay Semiconductor Diodes Division | |
| Lifecycle | Last Time Buy | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | IGBTs - Modules | |
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | - | |
| IGBT Type | - | |
| Configuration | Half Bridge | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 200A | |
| Power - Max | 650W | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A | |
| Current - Collector Cutoff (Max) | 5mA | |
| Input Capacitance (Cies) @ Vce | 7.43nF @ 25V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | INT-A-Pak | |
| Supplier Device Package | INT-A-PAK |
VS-GB100TP120N Documents
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