Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Configuration | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Mounting Type | Package / Case | Supplier Device Package |
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN 1.2KV 100A 3 TOWER |
In Stock537 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 1200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 200V 100A 3 TOWER |
In Stock591 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 200V 100A 3 TOWER |
In Stock475 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 400V 100A 3 TOWER |
In Stock465 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 400V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 400V 100A 3 TOWER |
In Stock576 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 400V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 600V 100A 3 TOWER |
In Stock295 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE GEN PURP 600V 100A 3 TOWER |
In Stock500 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io) (per Diode): 100A |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 400V 400A 3TOWER |
In Stock601 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 180ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 50V 400A 3TOWER |
In Stock132 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 125ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 50V 400A 3TOWER |
In Stock169 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 125ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 100V 400A 3TOWER |
In Stock214 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 125ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 100V 400A 3TOWER |
In Stock445 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 125ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 200V 400A 3TOWER |
In Stock237 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 125ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 200V 400A 3TOWER |
In Stock512 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 125ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 600V 400A 3TOWER |
In Stock234 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 240ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 600V 400A 3TOWER |
In Stock291 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io) (per Diode): 400A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 240ns |
Current - Reverse Leakage @ Vr: 25µA @ 50V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
IXYS |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 1.6KV 290A Y2-DCB |
In Stock310 More on Order |
|
Manufacturer: IXYS |
Series: - |
Diode Configuration: 1 Pair Series Connection |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1600V |
Current - Average Rectified (Io) (per Diode): 290A |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 600A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 40mA @ 1600V |
Operating Temperature - Junction: - |
Mounting Type: Chassis Mount |
Package / Case: Y2-DCB |
Supplier Device Package: Y2-DCB |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 200V 200A 3 TOWER |
In Stock168 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 200A |
Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 200V 200A 3 TOWER |
In Stock345 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io) (per Diode): 200A |
Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 200V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 150V 250A 3 TOWER |
In Stock164 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 150V |
Current - Average Rectified (Io) (per Diode): 250A |
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 150V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE SCHOTTKY 150V 250A 3 TOWER |
In Stock154 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Anode |
Diode Type: Schottky |
Voltage - DC Reverse (Vr) (Max): 150V |
Current - Average Rectified (Io) (per Diode): 250A |
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 1mA @ 150V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 1.6KV 600A 3TOWER |
In Stock465 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: - |
Diode Type: - |
Voltage - DC Reverse (Vr) (Max): 1600V |
Current - Average Rectified (Io) (per Diode): 600A (DC) |
Voltage - Forward (Vf) (Max) @ If: - |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: - |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: 3-SMD Module |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 1KV 600A 3TOWER |
In Stock130 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1000V |
Current - Average Rectified (Io) (per Diode): 600A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: 3-SMD Module |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 1.2KV 600A 3TOWER |
In Stock266 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1200V |
Current - Average Rectified (Io) (per Diode): 600A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: 3-SMD Module |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 1.4KV 600A 3TOWER |
In Stock289 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1400V |
Current - Average Rectified (Io) (per Diode): 600A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: 3-SMD Module |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 1.6KV 600A 3TOWER |
In Stock402 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: - |
Diode Type: - |
Voltage - DC Reverse (Vr) (Max): 1600V |
Current - Average Rectified (Io) (per Diode): 600A (DC) |
Voltage - Forward (Vf) (Max) @ If: - |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: - |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: 3-SMD Module |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 600V 600A 3TOWER |
In Stock529 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io) (per Diode): 600A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 600V |
Operating Temperature - Junction: -40°C ~ 175°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
GeneSiC Semiconductor |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 800V 600A 3TOWER |
In Stock352 More on Order |
|
Manufacturer: GeneSiC Semiconductor |
Series: - |
Diode Configuration: 1 Pair Common Cathode |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io) (per Diode): 600A (DC) |
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 25µA @ 600V |
Operating Temperature - Junction: -55°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Three Tower |
Supplier Device Package: Three Tower |
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE 1200V 160A |
In Stock352 More on Order |
|
Manufacturer: Infineon Technologies |
Series: * |
Diode Configuration: - |
Diode Type: - |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io) (per Diode): - |
Voltage - Forward (Vf) (Max) @ If: - |
Speed: - |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: - |
Operating Temperature - Junction: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
Infineon Technologies |
Diodes & Rectifiers - Rectifiers - Arrays DIODE MODULE GP 1400V 76A |
In Stock454 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Diode Configuration: 1 Pair Series Connection |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 1400V |
Current - Average Rectified (Io) (per Diode): 76A |
Voltage - Forward (Vf) (Max) @ If: 1.62V @ 230A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): - |
Current - Reverse Leakage @ Vr: 40mA @ 1400V |
Operating Temperature - Junction: -40°C ~ 150°C |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |