Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 800MA SUBSMA |
In Stock519 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 800MA SUBSMA |
In Stock281 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 800MA SUBSMA |
In Stock121 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 800MA SUBSMA |
In Stock204 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 800MA SUBSMA |
In Stock438 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 800MA SUBSMA |
In Stock412 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 800MA SUBSMA |
In Stock337 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 800MA SUBSMA |
In Stock147 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 800MA SUBSMA |
In Stock137 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 250ns |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 800MA SUBSMA |
In Stock520 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 250ns |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 800MA SUBSMA |
In Stock459 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 500ns |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 800MA SUBSMA |
In Stock403 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 500ns |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 800MA SUBSMA |
In Stock204 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 500ns |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 800MA SUBSMA |
In Stock430 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 500ns |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800MA SUB SMA |
In Stock582 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 500ns |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800MA SUB SMA |
In Stock208 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 800mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 500ns |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 10pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 500MA SUB SMA |
In Stock614 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 500MA SUB SMA |
In Stock437 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 500MA SUB SMA |
In Stock556 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 500MA SUB SMA |
In Stock396 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 500MA SUBSMA |
In Stock548 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 500MA SUBSMA |
In Stock553 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 500MA SUBSMA |
In Stock118 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 500MA SUBSMA |
In Stock288 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 500MA SUBSMA |
In Stock540 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 500MA SUBSMA |
In Stock448 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 500MA SUBSMA |
In Stock276 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 500MA SUBSMA |
In Stock206 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 500MA SUBSMA |
In Stock534 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 500MA SUBSMA |
In Stock134 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 500mA |
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA |
Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 150ns |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 4pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 150°C |