Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 50V 1A SUB SMA |
In Stock528 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 50V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 50V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock623 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock388 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock283 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock606 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 100V 1A SUB SMA |
In Stock265 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 100V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 100V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A SUB SMA |
In Stock457 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A SUB SMA |
In Stock246 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A SUB SMA |
In Stock182 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 200V 1A SUB SMA |
In Stock418 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 200V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 200V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock433 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock458 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock390 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock361 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock263 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 400V 1A SUB SMA |
In Stock221 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 400V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 400V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 1A SUB SMA |
In Stock500 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 1A SUB SMA |
In Stock316 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 1A SUB SMA |
In Stock405 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 600V 1A SUB SMA |
In Stock142 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 600V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 600V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock328 More on Order |
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Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock500 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock540 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock352 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock519 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 800V 1A SUB SMA |
In Stock517 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): 800V |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 800V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1000V 1A SUB SMA |
In Stock445 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1000V 1A SUB SMA |
In Stock472 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
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|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1000V 1A SUB SMA |
In Stock286 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
Diodes & Rectifiers - Rectifiers - Single DIODE GEN PURP 1000V 1A SUB SMA |
In Stock422 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: Automotive, AEC-Q101 |
Diode Type: Standard |
Voltage - DC Reverse (Vr) (Max): - |
Current - Average Rectified (Io): 1A |
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A |
Speed: Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): 1.8µs |
Current - Reverse Leakage @ Vr: 5µA @ 1000V |
Capacitance @ Vr, F: 9pF @ 4V, 1MHz |
Mounting Type: Surface Mount |
Package / Case: DO-219AB |
Supplier Device Package: Sub SMA |
Operating Temperature - Junction: -55°C ~ 175°C |