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Bipolar (BJT) - Arrays

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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays
Records 1,432
Page 15/48
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Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
ZXTDBM832TA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 20V 4.5A 8MLP

In Stock251

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Power - Max: 1.7W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)
EMT52T2R
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

PNP+PNP DRIVER TRANSISTOR. TWO 2

In Stock657

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
EMZ52T2R
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

PNP+NPN DRIVER TRANSISTOR. 2SAR5

In Stock476

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 350MHz, 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
ZXTD718MCTA
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 20V 3.5A 8DFN

In Stock613

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 3.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 1.7W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: W-DFN3020-8
UMB3NFHATN
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

PNP+PNP DIGITAL TRANSISTOR (WITH

In Stock464

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Manufacturer: Rohm Semiconductor
Series: Automotive, AEC-Q101
Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 150mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
UMB4NFHATN
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

PNP+PNP DIGITAL TRANSISTOR (CORR

In Stock518

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Manufacturer: Rohm Semiconductor
Series: Automotive, AEC-Q101
Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 150mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
UMB2NFHATN
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

PNP+PNP DIGITAL TRANSISTOR (CORR

In Stock319

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Manufacturer: Rohm Semiconductor
Series: Automotive, AEC-Q101
Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Power - Max: 150mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
BCM56DSF
Nexperia

Transistors - Bipolar (BJT) - Arrays

BCM56DS/SOT457/SC-74

In Stock449

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Manufacturer: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 500mW
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
BCM56DSX
Nexperia

Transistors - Bipolar (BJT) - Arrays

BCM56DS/SOT457/SC-74

In Stock663

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Manufacturer: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 500mW
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
EMX1FHAT2R
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

NPN+NPN GENERAL PURPOSE AMPLIFIC

In Stock598

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Manufacturer: Rohm Semiconductor
Series: Automotive, AEC-Q101
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
BC817RAPNZ
Nexperia

Transistors - Bipolar (BJT) - Arrays

BC817RAPN/SOT1268/DFN1412-6

In Stock641

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Manufacturer: Nexperia USA Inc.
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 350mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
2SA1873-GR(TE85L,F
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 50V 0.15A USV

In Stock403

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV
2SA1873-Y(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 50V 0.15A USV

In Stock307

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV
2SC4944-Y(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 50V 0.15A USV

In Stock286

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV
BC807RAZ
Nexperia

Transistors - Bipolar (BJT) - Arrays

BC807RA/SOT1268/DFN1412-6

In Stock641

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Manufacturer: Nexperia USA Inc.
Series: -
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 350mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
BC847RAZ
Nexperia

Transistors - Bipolar (BJT) - Arrays

BC847RA/SOT1268/DFN1412-6

In Stock374

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Manufacturer: Nexperia USA Inc.
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 480mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
BC817RAZ
Nexperia

Transistors - Bipolar (BJT) - Arrays

BC817RA/SOT1268/DFN1412-6

In Stock608

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Manufacturer: Nexperia USA Inc.
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 350mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1412-6
SMBT3904DW1T1G
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 40V 0.2A SC88

In Stock178

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
BC847BVC-7
Diodes Incorporated

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 45V 0.1A SOT563

In Stock420

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
DMC205010R
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 50V 0.1A MINI6

In Stock321

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Manufacturer: Panasonic Electronic Components
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 300mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B
DME205010R
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 50V 0.1A MINI6

In Stock318

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Manufacturer: Panasonic Electronic Components
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 300mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B
DMG204010R
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 50V 0.1A MINI6

In Stock424

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Manufacturer: Panasonic Electronic Components
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 300mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B
EMZ51T2R
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 20V 0.2A EMT6

In Stock425

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 400MHz, 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
EMT51T2R
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 20V 0.2A 6EMT

In Stock528

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
UP0459800L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 20V/50V SSMINI6

In Stock159

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Manufacturer: Panasonic Electronic Components
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 15mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V, 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V / 160 @ 2mA, 10V
Power - Max: 125mW
Frequency - Transition: 650MHz, 150MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
PEMZ7,115
Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 12V 0.5A SOT666

In Stock5,729

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Manufacturer: Nexperia USA Inc.
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
BCM857QASZ
Nexperia

Transistors - Bipolar (BJT) - Arrays

BCM857QAS/SOT1216/DFN1010B-6

In Stock285

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Manufacturer: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Transistor Type: 2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 175MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6
PEMT1,115
Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 40V 0.1A SOT666

In Stock5,246

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Manufacturer: Nexperia USA Inc.
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
EMT1DXV6T1G
ON Semiconductor

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.1A SOT563

In Stock488

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
EMX52T2R
Rohm Semiconductor

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 50V 0.1A EMT6

In Stock214

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Manufacturer: Rohm Semiconductor
Series: -
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6