Bipolar (BJT) - RF

Manufacturer

Reset

Series

Reset

Transistor Type

Reset

Voltage - Collector Emitter Breakdown (Max)

Reset

Frequency - Transition

Reset

Noise Figure (dB Typ @ f)

Reset

Gain

Reset

Power - Max

Reset

DC Current Gain (hFE) (Min) @ Ic, Vce

Reset

Current - Collector (Ic) (Max)

Reset

Operating Temperature

Reset

Mounting Type

Reset

Package / Case

Reset

Supplier Device Package

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / Bipolar (BJT) - RF

Records 1,506

Page 1/51

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC5086-O,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM	In Stock208,046 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1dB @ 500MHz	Gain: -	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
BFR360FH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 9V 14GHZ TSFP-3	In Stock105,357 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 9V	Frequency - Transition: 14GHz	Noise Figure (dB Typ @ f): 1dB @ 1.8GHz	Gain: 15.5dB	Power - Max: 210mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BFP640H6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ SOT343-4	In Stock62,520 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 4.5V	Frequency - Transition: 40GHz	Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	Gain: 12.5dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFP650H6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 37GHZ SOT343-4	In Stock41,136 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 4.5V	Frequency - Transition: 37GHz	Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	Gain: 10.5dB ~ 21.5dB	Power - Max: 500mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFR740L3RHE6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 42GHZ TSLP-3	In Stock24,289 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 4.7V	Frequency - Transition: 42GHz	Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	Gain: 24.5dB	Power - Max: 160mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3
BFQ790H6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6.1V 1.85GHZ SOT89	In Stock10,981 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 6.1V	Frequency - Transition: 1.85GHz	Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz	Gain: 17dB	Power - Max: 1.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V	Current - Collector (Ic) (Max): 300mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: SOT-89
2N2857	Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.9GHZ TO72	In Stock3,981 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 1.9GHz	Noise Figure (dB Typ @ f): 4.5dB @ 450MHz	Gain: -	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V	Current - Collector (Ic) (Max): 40mA	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AF, TO-72-4 Metal Can	Supplier Device Package: TO-72
KST10MTF	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SOT23-3	In Stock20,745 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 650MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 350mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V	Current - Collector (Ic) (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
MMBTH10LT1G	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SOT23-3	In Stock52,570 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 650MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V	Current - Collector (Ic) (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
MMBTH10-4LT1G	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 800MHZ SOT23-3	In Stock14,097 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 800MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V	Current - Collector (Ic) (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
MMBTH81	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 600MHZ SOT23-3	In Stock43,981 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: PNP	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: 600MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
MMBT918LT1G	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT23-3	In Stock9,259 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 600MHz	Noise Figure (dB Typ @ f): 6dB @ 60MHz	Gain: 11dB	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
MMBT5179	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2GHZ SOT23-3	In Stock111,885 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 2GHz	Noise Figure (dB Typ @ f): 5dB @ 200MHz	Gain: 15dB	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
BFR181WH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3	In Stock56,330 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	Gain: 19dB	Power - Max: 175mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V	Current - Collector (Ic) (Max): 20mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BFP183E7764HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT143-4	In Stock8,682 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	Gain: 22dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V	Current - Collector (Ic) (Max): 65mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-253-4, TO-253AA	Supplier Device Package: PG-SOT143-4
BFP196WH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT343-4	In Stock9,476 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7.5GHz	Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	Gain: 12.5dB ~ 19dB	Power - Max: 700mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
2SC5066-O,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM	In Stock8,065 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1dB @ 500MHz	Gain: -	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
BFR193WH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3	In Stock29,424 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	Gain: 10.5dB ~ 16dB	Power - Max: 580mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BFR183E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3	In Stock16,571 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	Gain: 17.5dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V	Current - Collector (Ic) (Max): 65mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFR193E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3	In Stock53,800 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	Gain: 10dB ~ 15dB	Power - Max: 580mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFP196WNH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT343-4	In Stock4,214 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7.5GHz	Noise Figure (dB Typ @ f): 1.3dB @ 900MHz	Gain: 9.7dB	Power - Max: 700mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFR193FH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ TSFP-3	In Stock9,152 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	Gain: 12.5dB	Power - Max: 580mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BFP183WH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8.5GHZ SOT343-4	In Stock12,321 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8.5GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	Gain: 22dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V	Current - Collector (Ic) (Max): 65mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFR182E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3	In Stock4,314 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	Gain: 12dB ~ 18dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFR93AE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6GHZ SOT23-3	In Stock49,015 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 6GHz	Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	Gain: 9.5dB ~ 14.5dB	Power - Max: 300mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 90mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFR93AWH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6GHZ SOT323-3	In Stock18,833 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 6GHz	Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	Gain: 10.5dB ~ 15.5dB	Power - Max: 300mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 90mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BFR106E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ SOT23-3	In Stock34,953 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz	Gain: 8.5dB ~ 13dB	Power - Max: 700mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V	Current - Collector (Ic) (Max): 210mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFP420FH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.5V 25GHZ 4TSFP	In Stock14,369 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5.5V	Frequency - Transition: 25GHz	Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz	Gain: 19.5dB	Power - Max: 160mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, Flat Leads	Supplier Device Package: 4-TSFP
BFP460H6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.8V 22GHZ SOT343-4	In Stock4,916 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5.8V	Frequency - Transition: 22GHz	Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz	Gain: 12.5dB ~ 26.5dB	Power - Max: 230mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V	Current - Collector (Ic) (Max): 70mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFS17NTA	Diodes Incorporated	Transistors - Bipolar (BJT) - RF RF TRANS NPN 11V 3.2GHZ SOT23-3	In Stock4,368 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 11V	Frequency - Transition: 3.2GHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 330mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3