Bipolar (BJT) - Single, Pre-Biased

Manufacturer

Reset

Series

Reset

Transistor Type

Reset

Current - Collector (Ic) (Max)

Reset

Voltage - Collector Emitter Breakdown (Max)

Reset

Resistor - Base (R1)

Reset

Resistor - Emitter Base (R2)

Reset

DC Current Gain (hFE) (Min) @ Ic, Vce

Reset

Vce Saturation (Max) @ Ib, Ic

Reset

Current - Collector Cutoff (Max)

Reset

Frequency - Transition

Reset

Power - Max

Reset

Mounting Type

Reset

Package / Case

Reset

Supplier Device Package

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

Records 3,282

Page 109/110

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
PDTA114YS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock466 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA115ES,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock146 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA115TS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock500 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA123ES,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock563 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA123JS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock505 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA123TK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3	In Stock378 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK
PDTA123YE,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW SC75	In Stock393 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SC-75
PDTA123YK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3	In Stock473 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK
PDTA123YS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock562 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA124TS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock292 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA124XS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock217 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA143TS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock454 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA143XS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock288 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA143ZS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock304 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA144TS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock438 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA144VK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3	In Stock278 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK
PDTA144VS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock201 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTA144WS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3	In Stock242 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTB113EK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3	In Stock333 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK
PDTB113ZK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3	In Stock474 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK
PDTB123EK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3	In Stock523 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK
PDTB123YK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3	In Stock572 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK
PDTC114YS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3	In Stock308 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTC115ES,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3	In Stock436 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTC115TS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3	In Stock405 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTC123ES,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3	In Stock394 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTC123JS,126	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3	In Stock289 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 500mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
PDTC123TE,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SC75	In Stock366 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SC-75
PDTC123YE,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SC75	In Stock446 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SC-75
PDTC123YK,115	NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3	In Stock318 More on Order	Manufacturer: NXP USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3; MPAK