Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS NPN 50V BIPOLAR SC75-3 |
In Stock7,859 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SC-75, SOT-416 |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 230MW SC59 |
In Stock7,807 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 230MW SC59 |
In Stock7,590 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 230MW SC59 |
In Stock4,373 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 230MW SC59-3 |
In Stock4,841 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59-3 |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SC75-3 |
In Stock4,690 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SC-75, SOT-416 |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W SC75-3 |
In Stock3,698 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: SC-75, SOT-416 |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 230MW SC59 |
In Stock3,988 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 230MW SC59 |
In Stock4,841 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 230mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
|
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Nexperia |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W |
In Stock4,454 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 140MHz |
Power - Max: 320mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |
|
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Nexperia |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W |
In Stock4,944 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 140MHz |
Power - Max: 320mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |
|
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Nexperia |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.425W |
In Stock4,053 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 225MHz |
Power - Max: 320mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.246W SOT23 |
In Stock37,400 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 246MW SOT23-3 |
In Stock40,548 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.246W SOT23 |
In Stock24,141 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.246W SOT23 |
In Stock13,270 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.246W SOT23 |
In Stock7,362 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.246W SOT23 |
In Stock7,765 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
|
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.246W SOT23 |
In Stock9,671 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 246mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 (TO-236) |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SMT3 |
In Stock4,227 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 20V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 150MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased DTD113EKFRA IS A TRANSISTOR WITH |
In Stock4,330 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased DTD143EKFRA IS A TRANSISTOR WITH |
In Stock3,807 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 50V SOT723 |
In Stock24,826 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: VESM |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 202MW SC70-3 |
In Stock44,447 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 202mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SC-70-3 (SOT323) |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.15W SC89 |
In Stock4,684 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 20mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100 kOhms |
Resistor - Emitter Base (R2): 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-89, SOT-490 |
Supplier Device Package: EMT3F (SOT-416FL) |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V TO236-3 |
In Stock3,962 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: S-Mini |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW UMT3 |
In Stock3,795 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: UMT3 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W S-MINI |
In Stock3,889 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: S-Mini |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 |
In Stock279,586 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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![]() |
Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock362 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |