Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

Records 3,282

Page 36/110

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
DTB123YKT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3	In Stock267 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
DTB114EKT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3	In Stock240 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
SMUN2214T3G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 230MW SC59	In Stock194 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SC-59
DTC114EMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW VMT3	In Stock442 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
NSBC114EF3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123	In Stock270 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 254mW	Mounting Type: Surface Mount	Package / Case: SOT-1123	Supplier Device Package: SOT-1123
DTC124EMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW VMT3	In Stock448 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 30mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DRA2114T0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock335 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2144T0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock643 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRC2144W0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock260 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2123J0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock467 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2144W0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock462 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2144E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock355 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2143Z0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock539 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2123E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock397 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DTD723YMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW VMT3	In Stock550 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 30V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 260MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DRA2144V0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock271 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRC2143Y0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock384 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRC2144G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock471 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): -	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2114E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock287 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRC2113Z0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock549 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2143Y0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock561 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRC2614T0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock525 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 20V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 1µA (ICBO)	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DTA144TETL	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3	In Stock454 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: EMT3
DRC2124E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock443 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRC2152Z0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock197 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 510 Ohms	Resistor - Emitter Base (R2): 5.1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DTD523YETL	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW EMT3	In Stock509 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 12V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 260MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: EMT3
DRA2143X0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock306 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2143E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock347 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA2124E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock387 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DTD113ZUT106	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3	In Stock510 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3

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