Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3 |
In Stock510 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 20V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 150MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: UMT3 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3 |
In Stock528 More on Order |
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Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3 |
In Stock382 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SMT3 |
In Stock263 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3 |
In Stock201 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3 |
In Stock358 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B |
|
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 1.5W MPT3 |
In Stock627 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 80MHz |
Power - Max: 1.5W |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: MPT3 |
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Nexperia |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 |
In Stock461 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SC-70 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM |
In Stock546 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: USM |
|
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3 |
In Stock538 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW EMT3F |
In Stock360 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-89, SOT-490 |
Supplier Device Package: EMT3F (SOT-416FL) |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3 |
In Stock448 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323 |
In Stock575 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
|
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW VMT3 |
In Stock218 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 100 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: VMT3 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 260MW SOT723 |
In Stock636 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 260mW |
Mounting Type: Surface Mount |
Package / Case: SOT-723 |
Supplier Device Package: SOT-723 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W USM |
In Stock339 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: USM |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323 |
In Stock277 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.15W SC89 |
In Stock592 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-89, SOT-490 |
Supplier Device Package: EMT3F (SOT-416FL) |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.15W SC89 |
In Stock641 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 30mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-89, SOT-490 |
Supplier Device Package: EMT3F (SOT-416FL) |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 |
In Stock375 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: EMT3 |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 50V UMT3F |
In Stock561 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): 500nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: SC-85 |
Supplier Device Package: UMT3F |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3 |
In Stock493 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: SC-75, SOT-416 |
Supplier Device Package: EMT3 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3 |
In Stock497 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7 kOhms |
Resistor - Emitter Base (R2): 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: Mini3-G3-B |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased PNP DIGITAL TRANSISTOR (WITH BUI |
In Stock589 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased PNP DIGITAL TRANSISTOR (WITH BUI |
In Stock143 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased NPN DIGITAL TRANSISTOR (WITH BUI |
In Stock373 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased NPN DIGITAL TRANSISTOR (WITH BUI |
In Stock235 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased NPN DIGITAL TRANSISTOR (WITH BUI |
In Stock466 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Rohm Semiconductor |
Transistors - Bipolar (BJT) - Single, Pre-Biased PNP DIGITAL TRANSISTOR (WITH BUI |
In Stock364 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single, Pre-Biased NPN BRT Q1BSR47KOHM Q1BER47KOHM |
In Stock249 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Resistor - Base (R1): - |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |