Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

Records 3,282

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
PDTC124TU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock535 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTC144WU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock275 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTC144VU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock476 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTA113EU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323	In Stock495 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTA113ZU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323	In Stock302 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTA123YU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT323	In Stock607 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTC123TT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TO236AB	In Stock458 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTC144VT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TO236AB	In Stock541 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA143TT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock431 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA144WT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock494 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
DTA144WM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 260MW SOT723	In Stock427 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
FJN4309RTA	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW TO92-3	In Stock389 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 40V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 300mW	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Supplier Device Package: TO-92-3
ADTA144EUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323	In Stock372 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
ADTC114EUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323	In Stock309 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
ADTC144EUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323	In Stock519 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
RN1114MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock376 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
RN2108MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock306 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
RN2110MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock572 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
RN2111MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock268 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
RN2114MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock378 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
RN2115MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock288 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
RN2117MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock444 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
RN2130MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F VESM TRANSISTOR PD 150M	In Stock477 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
DTC143TEBTL	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW EMT3	In Stock220 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: EMT3
ADTA143XUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIASTRANSISTORSOT323	In Stock423 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
ADTA143ZUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIASTRANSISTORSOT323	In Stock547 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
ADTC143ZUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIASTRANSISTORSOT323	In Stock500 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
ADTC114YUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323 T&R 10	In Stock458 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
ADTC143TUAQ-13	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased PREBIAS TRANSISTOR SOT323 T&R 10	In Stock556 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
RN2310,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM	In Stock300 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM