Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

Records 3,282

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
PDTA143ZT,235	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock477 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA143ZT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock23,511 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA144ET,235	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock311 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA144ET,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock18,974 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTC143TU,135	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock479 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTC143TU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock15,707 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTC143TT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TO236AB	In Stock16,514 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTC114TT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TO236AB	In Stock9,924 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTC114TT,235	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TO236AB	In Stock527 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA124ET,235	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock511 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA124ET,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock9,163 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTC143XU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock4,306 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: 230MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PDTA123JT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock4,265 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA123YT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock3,823 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTA115ET,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB	In Stock4,656 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTC123YT,215	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW TO236AB	In Stock4,127 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTC123YU,115	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock3,832 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
RN1301,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W USM	In Stock43,700 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
DTA115EKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3	In Stock45,176 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
DTC125TUAT106	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3	In Stock51,153 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 200 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3
DTA123EKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3	In Stock43,475 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
DTA143TKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3	In Stock31,725 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
DTA124XUAT106	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW UMT3	In Stock18,177 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3
DTC124XKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SMT3	In Stock14,520 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
DTC115EKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SMT3	In Stock8,774 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
DTC123YUAT106	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3	In Stock10,025 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3
DTC143XUAT106	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3	In Stock9,412 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3
DTC124EUBTL	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW UMT3F	In Stock8,023 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 30mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-85	Supplier Device Package: UMT3F
DTA123JKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3	In Stock4,784 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
DTC143TKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SMT3	In Stock4,076 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3