Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

Records 3,282

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
NSVDTC114YM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS NPN 50V BIPOLAR SOT723	In Stock553 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTC143ZM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS NPN 50V 100MA SOT723	In Stock313 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTC144TM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS NPN 50V BIPOLAR SOT723	In Stock490 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTA113EM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PNP 50V 0.1A SOT723	In Stock264 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTA123EM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PNP 50V 0.1A SOT723	In Stock390 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTC113EM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS NPN 50V 0.1A SOT723	In Stock396 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTC123EM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS NPN 50V 0.1A SOT723	In Stock292 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTA114YM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 260MW SOT723	In Stock286 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTA143EM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 260MW SOT723	In Stock470 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
NSVDTA123JM3T5G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS SS SOT723 BR XSTR PNP	In Stock308 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 260mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: SOT-723
PDTB114ETVL	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W	In Stock283 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 140MHz	Power - Max: 320mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTB143ETVL	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W	In Stock578 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 140MHz	Power - Max: 320mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTB143XTVL	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W	In Stock485 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 140MHz	Power - Max: 320mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTD114ETVL	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.425W	In Stock259 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 225MHz	Power - Max: 320mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTD143ETVL	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.425W	In Stock269 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 225MHz	Power - Max: 320mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
PDTD143XTVL	Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.425W	In Stock427 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 225MHz	Power - Max: 320mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
NSVMMUN2114LT3G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PNP BIPO 50V SOT23-3	In Stock271 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 246mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
BCR523E6433HTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 300MW SOT23-3	In Stock231 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 100MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR553E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3	In Stock502 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR555E6433HTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3	In Stock433 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR573E6433HTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 300MW SOT23-3	In Stock419 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR521E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.33W SOT23-3	In Stock648 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 100MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR573E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.33W SOT23-3	In Stock409 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BCR583E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.33W SOT23-3	In Stock412 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 150MHz	Power - Max: 330mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTD122LC-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock398 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 220 Ohms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTD114GC-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock394 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): -	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTD114TC-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock351 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTD122JC-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock419 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 220 Ohms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTD123EC-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock313 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTD143EC-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock396 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3