Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A TO-92 |
In Stock357 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A TO-92 |
In Stock366 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A TO-92 |
In Stock433 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 0.5A TO-92 |
In Stock404 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock600 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock255 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock310 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock435 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock364 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock511 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 125MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock461 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock279 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 1.2A TO-92 |
In Stock504 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 1.2A TO-92 |
In Stock509 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 1.2A TO-92 |
In Stock350 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 60V 1.2A TO-92 |
In Stock371 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 1.2A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 100MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.5A TO-92 |
In Stock455 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.5A TO-92 |
In Stock445 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.5A TO-92 |
In Stock310 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.5A TO-92 |
In Stock419 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.5A TO-92 |
In Stock422 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 300V 0.5A TO-92 |
In Stock345 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 200V 0.5A TO-92 |
In Stock371 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 200V 0.5A TO-92 |
In Stock333 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS PNP 200V 0.5A TO-92 |
In Stock319 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 200V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 50MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.05A TO-92 |
In Stock389 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 400MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.05A TO-92 |
In Stock361 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 7mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 2V |
Power - Max: 625mW |
Frequency - Transition: 500MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.05A TO-92 |
In Stock470 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 50mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 7mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 2V |
Power - Max: 625mW |
Frequency - Transition: 500MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.2A TO-92 |
In Stock474 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 60MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.2A TO-92 |
In Stock280 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 120V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 60MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |