Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 400/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N3439L	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 350V 1A	In Stock285 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/368	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 350V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA	Current - Collector Cutoff (Max): 2µA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JAN2N3440	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 250V 1A	In Stock298 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/368	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 250V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA	Current - Collector Cutoff (Max): 2µA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
JAN2N3486A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A	In Stock374 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/392	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 400mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46
JAN2N3700UB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A	In Stock529 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/391	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, No Lead	Supplier Device Package: 3-UB (2.9x2.2)
JAN2N3737	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A TO46	In Stock463 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/395	Transistor Type: NPN	Current - Collector (Ic) (Max): 1.5A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46-3
JANTX2N2219	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A TO39	In Stock276 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/251	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
JANTX2N2222AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO18	In Stock201 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/255	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-218
JANTX2N2907AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A	In Stock540 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-206AA (TO-18)
JANTX2N3057A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A	In Stock255 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/391	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46
JANTX2N3439L	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 350V 1A	In Stock512 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/368	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 350V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA	Current - Collector Cutoff (Max): 2µA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JANTX2N3737	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A	In Stock553 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/395	Transistor Type: NPN	Current - Collector (Ic) (Max): 1.5A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-46-3	Supplier Device Package: TO-46 (TO-206AB)
JANTXV2N2484	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A TO18	In Stock454 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/376	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 2nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V	Power - Max: 360mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
JANTXV2N2905AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO5	In Stock640 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/290	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1μA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JANTXV2N2906AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A 3UB	In Stock145 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, No Lead	Supplier Device Package: UB
JANTXV2N3501L	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.3A	In Stock651 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/366	Transistor Type: NPN	Current - Collector (Ic) (Max): 300mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JANTXV2N3735	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A TO39	In Stock326 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/395	Transistor Type: NPN	Current - Collector (Ic) (Max): 1.5A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
JANTXV2N3735L	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A TO5	In Stock261 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/395	Transistor Type: NPN	Current - Collector (Ic) (Max): 1.5A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JANTXV2N3737	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A TO46	In Stock478 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/395	Transistor Type: NPN	Current - Collector (Ic) (Max): 1.5A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46-3
JANTXV2N3737UB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 1.5A UB	In Stock441 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/395	Transistor Type: NPN	Current - Collector (Ic) (Max): 1.5A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, No Lead	Supplier Device Package: -
JANTXV2N4029	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A TO18	In Stock262 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/512	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
JANTXV2N4033	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A TO39	In Stock441 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/512	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
JANTXV2N5582	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO46	In Stock461 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/423	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46-3
2N2906A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO-18	In Stock272 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
2N2907AUA	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A	In Stock214 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, No Lead	Supplier Device Package: -
2N3700	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A TO18	In Stock365 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
2N2219	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A TO-39	In Stock170 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
2N2219AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO-39	In Stock309 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
2N2369AUA	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V SMD	In Stock288 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 15V	Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 400nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V	Power - Max: 360mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD	Supplier Device Package: SMD
2N2369AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V SMD	In Stock307 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 15V	Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 400nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V	Power - Max: 360mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD	Supplier Device Package: SMD
2N2905AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A	In Stock535 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1μA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5