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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 415/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A SOT223 |
In Stock249 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 2W |
Frequency - Transition: 400MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.2A SMT |
In Stock335 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 200mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V |
Power - Max: 2W |
Frequency - Transition: 300MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A SOT223 |
In Stock542 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Power - Max: 2W |
Frequency - Transition: 100MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS PNP 150V 0.6A SOT223 |
In Stock486 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 150V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V |
Power - Max: 2W |
Frequency - Transition: 300MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
|
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN 160V 0.6A SOT223 |
In Stock551 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 160V |
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Power - Max: 2W |
Frequency - Transition: 300MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 30V 0.5A SOT223 |
In Stock462 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 2W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS PNP DARL 30V 0.5A SOT223 |
In Stock431 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: PNP - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 2W |
Frequency - Transition: 125MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO-92 |
In Stock272 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V |
Power - Max: 625mW |
Frequency - Transition: 200MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
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Central Semiconductor Corp |
Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A TO-92 |
In Stock481 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Power - Max: 625mW |
Frequency - Transition: 400MHz |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: TO-92 |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - Single TRANS NPN 60V 6A SOT-223 |
In Stock295 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 6A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 375mV @ 300mA, 6A |
Current - Collector Cutoff (Max): 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V |
Power - Max: 3W |
Frequency - Transition: 130MHz |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 160V 0.7A NP |
In Stock307 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 700mA |
Voltage - Collector Emitter Breakdown (Max): 160V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Power - Max: 700mW |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: 3-NP |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 160V 1.5A NMP |
In Stock182 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1.5A |
Voltage - Collector Emitter Breakdown (Max): 160V |
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Power - Max: 1W |
Frequency - Transition: 120MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: SC-71 |
Supplier Device Package: 3-NMP |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 50V 2A 3MP |
In Stock241 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V |
Power - Max: 1W |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Supplier Device Package: 3-MP |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Single TRANS NPN 50V 2A NP |
In Stock323 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V |
Power - Max: 750mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: 3-NP |
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Microsemi |
Transistors - Bipolar (BJT) - Single TRANS NPN 300V 2A TO-66 |
In Stock663 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 2A |
Voltage - Collector Emitter Breakdown (Max): 300V |
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A |
Current - Collector Cutoff (Max): 200nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V |
Power - Max: 1W |
Frequency - Transition: - |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-213AA, TO-66-2 |
Supplier Device Package: TO-66 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single CHIP T0110L-3 E6762 DIE |
In Stock385 More on Order |
|
Manufacturer: Infineon Technologies |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single CHIP T0204GU E6327 DIE |
In Stock535 More on Order |
|
Manufacturer: Infineon Technologies |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANS NPN 45V SOT323-3 |
In Stock239 More on Order |
|
Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V |
Power - Max: 500mW |
Frequency - Transition: 170MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANS PREBIAS PNP SOT23 |
In Stock393 More on Order |
|
Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 330mW |
Frequency - Transition: 250MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANS PREBIAS PNP SOT23 |
In Stock568 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V |
Power - Max: 330mW |
Frequency - Transition: 250MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANS PREBIAS NPN SOT23 |
In Stock452 More on Order |
|
Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
Power - Max: 200mW |
Frequency - Transition: 150MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR AF SOT23 |
In Stock250 More on Order |
|
Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 30V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V |
Power - Max: 360mW |
Frequency - Transition: 170MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR AF SOT23 |
In Stock415 More on Order |
|
Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN - Darlington |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 60V |
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V |
Power - Max: 360mW |
Frequency - Transition: 170MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR AF SOT23 |
In Stock623 More on Order |
|
Manufacturer: Infineon Technologies |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR AF SOT23 |
In Stock474 More on Order |
|
Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 32V |
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V |
Power - Max: 330mW |
Frequency - Transition: 250MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR AF SOT23 |
In Stock325 More on Order |
|
Manufacturer: Infineon Technologies |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR AF SOT23 |
In Stock174 More on Order |
|
Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 45V |
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V |
Power - Max: 500mW |
Frequency - Transition: 170MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR AF SOT23 |
In Stock340 More on Order |
|
Manufacturer: Infineon Technologies |
Series: * |
Transistor Type: - |
Current - Collector (Ic) (Max): - |
Voltage - Collector Emitter Breakdown (Max): - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Power - Max: - |
Frequency - Transition: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Infineon Technologies |
Transistors - Bipolar (BJT) - Single TRANSISTOR NPN SOT89 |
In Stock288 More on Order |
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Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 80V |
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V |
Power - Max: 2W |
Frequency - Transition: 100MHz |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: PG-SOT89 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Single TRANSISTOR PNP 50V 150MA S-MINI |
In Stock417 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: PNP |
Current - Collector (Ic) (Max): 150mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V |
Power - Max: 150mW |
Frequency - Transition: 80MHz |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: S-Mini |