FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

Records 3,829

Page 17/128

Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSM120D12P2C005	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 120A MODULE	In Stock555 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Silicon Carbide (SiC)	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 2.7V @ 22mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V	Power - Max: 780W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: -	Package / Case: Module	Supplier Device Package: Module
NX138AKSX	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 170MA 6TSSOP	In Stock4,070 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)	Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V	Power - Max: 325mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: 6-TSSOP
NX7002AKS,115	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.17A SC-88	In Stock14,652 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 170mA	Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V	Power - Max: 220mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: 6-TSSOP
SSM6N37FU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA US6	In Stock35,615 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 1.5V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V	Power - Max: 300mW	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
VT6J1T2CR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.1A VMT6	In Stock10,801 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate, 1.2V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V	Power - Max: 120mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: VMT6
SSM6N35FE,LM	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.18A ES6	In Stock5,695 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 180mA	Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6 (1.6x1.6)
SSM6L35FE,LM	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.18A/0.1A ES6	In Stock6,021 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA	Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6 (1.6x1.6)
DMG6301UDW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 0.24A SOT363	In Stock3,711 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 240mA	Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V	Power - Max: 300mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
DMN601VK-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.305A SOT-563	In Stock4,034 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 305mA	Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	Power - Max: 250mW	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
DMN32D4SDW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.65A SOT363	In Stock4,104 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 650mA	Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V	Vgs(th) (Max) @ Id: 1.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V	Power - Max: 290mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
FC6546010R	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.1A SMINI6-F3	In Stock9,615 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: SMini6-F3-B
NX3008NBKSH	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 350MA 6TSSOP	In Stock4,230 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V	Power - Max: 445mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: 6-TSSOP
PMCXB900UEZ	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.6A/0.5A 6DFN	In Stock91,983 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchFET®	FET Type: N and P-Channel Complementary	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA	Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V	Power - Max: 265mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1010B-6
PMDXB950UPELZ	Nexperia	Transistors - FETs, MOSFETs - Arrays 20 V, DUAL P-CHANNEL TRENCH MOSF	In Stock8,201 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 500mA	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V	Vgs(th) (Max) @ Id: 950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V	Power - Max: 380mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: DFN1010B-6
BSS84V-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 50V 0.13A SOT-563	In Stock4,432 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 130mA	Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V	Power - Max: 150mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
DMN2050LFDB-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3.3A 6UDFN	In Stock13,739 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.3A	Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V	Power - Max: 730mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-UDFN Exposed Pad	Supplier Device Package: U-DFN2020-6 (Type B)
2N7002VA	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.28A SOT563F	In Stock4,562 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 280mA	Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	Power - Max: 250mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563F
SM6K2T110	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A SOT-457	In Stock4,516 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 200mA	Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V	Power - Max: 300mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-74, SOT-457	Supplier Device Package: SMT6
SSM6P49NU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 2-1Y1A	In Stock4,232 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4A	Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 1.2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V	Power - Max: 1W	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-WDFN Exposed Pad	Supplier Device Package: 6-UDFN (2x2)
SSM6L61NU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 4A UDFN6	In Stock4,562 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4A	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 6-WDFN Exposed Pad	Supplier Device Package: 6-UDFN (2x2)
SI1035X-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SC-89	In Stock15,496 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA	Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)	Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 250mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SC-89-6
TSM250N02DCQ RFG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 20V 5.8A 6TDFN	In Stock12,159 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)	Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 800mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V	Power - Max: 620mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-VDFN Exposed Pad	Supplier Device Package: 6-TDFN (2x2)
CMLDM7003TG TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT563	In Stock4,897 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 280mA	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 50mA, 5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	Power - Max: 350mW	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
DMP2100UFU-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V U-DFN2030-6	In Stock7,680 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.7A	Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V	Power - Max: 900mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-UFDFN Exposed Pad	Supplier Device Package: U-DFN2030-6 (Type B)
NTLUD3A260PZTAG	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.3A UDFN6	In Stock20,788 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.3A	Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V	Power - Max: 500mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-UFDFN Exposed Pad	Supplier Device Package: 6-UDFN (1.6x1.6)
DMN2014LHAB-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 9A 6-UDFN	In Stock4,847 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 9A	Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V	Power - Max: 800mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-UFDFN Exposed Pad	Supplier Device Package: U-DFN2030-6 (Type B)
AON3611	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/6A 8DFN	In Stock8,045 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N and P-Channel, Common Drain	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5A, 6A	Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V	Power - Max: 2.1W, 2.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SMD, Flat Lead	Supplier Device Package: 8-DFN (2.9x2.3)
TSM3911DCX6 RFG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Arrays MOSFET 2 P-CH 20V 2.2A SOT26	In Stock44,282 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)	Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V	Vgs(th) (Max) @ Id: 950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V	Power - Max: 1.15W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-23-6	Supplier Device Package: SOT-26
CMLDM3757 TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563	In Stock19,729 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA	Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V	Power - Max: 350mW	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
DMC3016LSD-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8.2A/6.2A 8SO	In Stock6,907 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A	Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V	Power - Max: 1.2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO