Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays 4V DRIVE NCH+NCH MOSFET (CORRESP |
In Stock430 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7.5A 8SOIC |
In Stock393 More on Order |
|
Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7.5A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 10V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 8.6A/6.5A 8-SO |
In Stock182 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A |
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V |
Power - Max: 1.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 40V 8A 8SO |
In Stock369 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V |
Power - Max: 3.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2NCH 60V 7.1A 8SO |
In Stock651 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A |
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V |
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V |
Power - Max: 1.5W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 60V 2.7A 8-SOIC |
In Stock2,351 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2.7A |
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V |
Power - Max: 1.81W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK SO8 |
In Stock628 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V |
Power - Max: 48W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V POWERPAK SO8 |
In Stock416 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V |
Power - Max: 48W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V POWERPAK SO8 |
In Stock378 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V |
Power - Max: 27W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V POWERPAK SO8 |
In Stock357 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V |
Power - Max: 48W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 75V POWERPAK SO8 |
In Stock598 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 17A (Tc) |
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V |
Power - Max: 34W (Tc) |
Operating Temperature: -55°C ~ 175°C (TA) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK SO8 |
In Stock291 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V |
Power - Max: 34W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 6WLCSP |
In Stock188 More on Order |
|
Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-XFBGA, WLCSP |
Supplier Device Package: 6-WLCSP (1.3x2.3) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6A PPAK 1212-8 |
In Stock304 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V |
Power - Max: 17.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 1212-8 Dual |
Supplier Device Package: PowerPAK® 1212-8 Dual |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 6A SO8FL |
In Stock405 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V |
Power - Max: 3.2W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6A 1212-8 |
In Stock228 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V |
Power - Max: 17.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 1212-8 Dual |
Supplier Device Package: PowerPAK® 1212-8 Dual |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.3A 8-SOIC |
In Stock41,920 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.3A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 8-MSOP |
In Stock478 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V |
Power - Max: 1.04W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: 8-MSOP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 12A PPAK 1212-8 |
In Stock159 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A, 16A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V |
Power - Max: 20W, 30W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-PowerPair™ |
Supplier Device Package: 6-PowerPair™ |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V POWERPAK SO8 |
In Stock233 More on Order |
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Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc) |
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V |
Power - Max: 27W (Tc), 48W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 60V 7.6A 8SO |
In Stock293 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) |
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V |
Power - Max: 1.4W, 1.9W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 4.5A 12DSBGA |
In Stock528 More on Order |
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Manufacturer: |
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V |
Power - Max: 1.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-UFBGA, DSBGA |
Supplier Device Package: 12-DSBGA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V/20V 8SOIC |
In Stock329 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V, 20V |
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.9A 8-SOIC |
In Stock2,145 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V |
Power - Max: 1.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 100V POWERPAK SO8 |
In Stock461 More on Order |
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Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V |
Power - Max: 48W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V POWERPAK SO8 |
In Stock481 More on Order |
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Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V |
Power - Max: 48W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 80V POWERPAK SO8 |
In Stock306 More on Order |
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Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V |
Power - Max: 48W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 45V 4.5A SOP8 |
In Stock405 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 45V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.7A 8-SOIC |
In Stock462 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.7A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 2W |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6A CHIPFET |
In Stock405 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
Power - Max: 8.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® ChipFET™ Dual |
Supplier Device Package: PowerPAK® ChipFet Dual |