FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

Records 3,829

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
ALD1101SAL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC	In Stock261 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: -	FET Type: 2 N-Channel (Dual) Matched Pair	FET Feature: Standard	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 75Ohm @ 5V	Vgs(th) (Max) @ Id: 1V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
ALD114835SCL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC	In Stock527 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: EPAD®	FET Type: 4 N-Channel, Matched Pair	FET Feature: Depletion Mode	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA	Rds On (Max) @ Id, Vgs: 540Ohm @ 0V	Vgs(th) (Max) @ Id: 3.45V @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Surface Mount	Package / Case: 16-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 16-SOIC
ALD212900APAL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP	In Stock429 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: EPAD®, Zero Threshold™	FET Type: 2 N-Channel (Dual) Matched Pair	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: 80mA	Rds On (Max) @ Id, Vgs: 14Ohm	Vgs(th) (Max) @ Id: 10mV @ 20µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Through Hole	Package / Case: 8-DIP (0.300", 7.62mm)	Supplier Device Package: 8-PDIP
ALD110800ASCL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC	In Stock302 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: EPAD®, Zero Threshold™	FET Type: 4 N-Channel, Matched Pair	FET Feature: Standard	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 500Ohm @ 4V	Vgs(th) (Max) @ Id: 10mV @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Surface Mount	Package / Case: 16-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 16-SOIC
ALD210800APCL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP	In Stock497 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: EPAD®, Zero Threshold™	FET Type: 4 N-Channel, Matched Pair	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: 80mA	Rds On (Max) @ Id, Vgs: 25Ohm	Vgs(th) (Max) @ Id: 10mV @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Through Hole	Package / Case: 16-DIP (0.300", 7.62mm)	Supplier Device Package: 16-PDIP
ALD310700APCL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16DIP	In Stock444 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: EPAD®, Zero Threshold™	FET Type: 4 P-Channel, Matched Pair	FET Feature: Standard	Drain to Source Voltage (Vdss): 8V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 20mV @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C	Mounting Type: Through Hole	Package / Case: 16-DIP (0.300", 7.62mm)	Supplier Device Package: 16-PDIP
ALD1102ASAL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8SOIC	In Stock431 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: -	FET Type: 2 P-Channel (Dual) Matched Pair	FET Feature: Standard	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 270Ohm @ 5V	Vgs(th) (Max) @ Id: 1.2V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
FMP26-02P	IXYS	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 200V 26A/17A I4PAC	In Stock355 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 26A, 17A	Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V	Power - Max: 125W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: i4-Pac™-5	Supplier Device Package: ISOPLUS i4-PAC™
DMN1150UFL3-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CHA 12V 2A DFN1310	In Stock432 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 2A	Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V	Power - Max: 390mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-XFDFN Exposed Pad	Supplier Device Package: X2-DFN1310-6 (Type B)
DMN2028UFU-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7.5A UDFN2030-6	In Stock290 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual) Common Drain	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 7.5A	Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V	Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V	Power - Max: 900mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-UFDFN Exposed Pad	Supplier Device Package: U-DFN2030-6 (Type B)
DMG4511SK4-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 35V TO252-4L	In Stock688 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N and P-Channel, Common Drain	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 35V	Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A	Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V	Power - Max: 1.54W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Supplier Device Package: TO-252-4L
DMN2010UDZ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 11A U-DFN2535-6	In Stock439 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual) Common Drain	FET Feature: Standard	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 11A	Rds On (Max) @ Id, Vgs: 7mOhm @ 5.5A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V	Power - Max: 700mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-UDFN Exposed Pad	Supplier Device Package: U-DFN2535-6
CMLDM7002AG TR	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.28A SOT563	In Stock367 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 280mA	Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	Power - Max: 350mW	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
BUK7K134-100EX	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 9.8A LFPAK56	In Stock284 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.8A	Rds On (Max) @ Id, Vgs: 121mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V	Power - Max: 32W	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-1205, 8-LFPAK56	Supplier Device Package: LFPAK56D
STS8DNF3LL	STMicroelectronics	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8-SOIC	In Stock513 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™ II	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8A	Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V	Power - Max: 1.6W	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
ZXMP3A16DN8TA	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.2A 8-SOIC	In Stock477 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.2A	Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA (Min)	Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V	Power - Max: 1.8W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOP
FDMS3668S	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 13A/18A 8-PQFN	In Stock606 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: 2 N-Channel (Dual) Asymmetrical	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A, 18A	Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-PowerTDFN	Supplier Device Package: Power56
EPC2111ENGRT	EPC	Transistors - FETs, MOSFETs - Arrays GAN TRANS ASYMMETRICAL HALF BRID	In Stock332 More on Order	Manufacturer: EPC	Series: -	FET Type: 2 N-Channel (Half Bridge)	FET Feature: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta)	Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V	Vgs(th) (Max) @ Id: 2.5V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V	Power - Max: -	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
ALD110808APCL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP	In Stock502 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: EPAD®	FET Type: 4 N-Channel, Matched Pair	FET Feature: Standard	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA	Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V	Vgs(th) (Max) @ Id: 810mV @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Through Hole	Package / Case: 16-DIP (0.300", 7.62mm)	Supplier Device Package: 16-PDIP
ALD1102APAL	Advanced Linear Devices Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8DIP	In Stock476 More on Order	Manufacturer: Advanced Linear Devices Inc.	Series: -	FET Type: 2 P-Channel (Dual) Matched Pair	FET Feature: Standard	Drain to Source Voltage (Vdss): 10.6V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 270Ohm @ 5V	Vgs(th) (Max) @ Id: 1.2V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 500mW	Operating Temperature: 0°C ~ 70°C (TJ)	Mounting Type: Through Hole	Package / Case: 8-DIP (0.300", 7.62mm)	Supplier Device Package: 8-PDIP
SSM6L36TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH + P-CH	In Stock581 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate, 1.5V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)	Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.23nC, 1.2nC @ 4V	Input Capacitance (Ciss) (Max) @ Vds: 46pF, 43pF @ 10V	Power - Max: 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: UF6
SSM6N24TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CHX2 VDSS3	In Stock412 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	FET Feature: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
SSM6N40TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CHX2 VDSS3	In Stock532 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	FET Feature: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
SSM6P39TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS-	In Stock423 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	FET Feature: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
SSM6P40TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS-	In Stock229 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	FET Feature: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
SSM6L40TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays X34 PB-F UF6 S-MOS (LF) TRANSIST	In Stock543 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate, 4V Drive	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)	Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 5.1nC, 2.9nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 180pF, 120pF @ 15V	Power - Max: 500mW (Ta)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: UF6
SSM6P54TU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS-	In Stock212 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	FET Feature: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
SSM6P69NU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET P-CHX2 VDSS-	In Stock435 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: *	FET Type: -	FET Feature: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
SH8K25GZ0TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays 4V DRIVE NCH+NCH MOSFET. A POWER	In Stock345 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)	Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V	Power - Max: 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOP
SH8MA2GZETB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays SH8MA2 IS A POWER MOSFET WITH LO	In Stock343 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3nC, 6.7nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 125pF, 305pF @ 15V	Power - Max: 1.4W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOP