FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CCS050M12CM2	Cree/Wolfspeed	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 87A MODULE	In Stock708 More on Order	Manufacturer: Cree/Wolfspeed	Series: Z-FET™ Z-Rec™	FET Type: 6 N-Channel (3-Phase Bridge)	FET Feature: Silicon Carbide (SiC)	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 87A (Tc)	Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V	Vgs(th) (Max) @ Id: 2.3V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V	Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V	Power - Max: 337W	Operating Temperature: 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: Module	Supplier Device Package: Module
BSM180D12P3C007	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays SIC POWER MODULE	In Stock478 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Silicon Carbide (SiC)	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 5.6V @ 50mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V	Power - Max: 880W	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: Module	Supplier Device Package: Module
CAS300M17BM2	Cree/Wolfspeed	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1700V 325A MODULE	In Stock476 More on Order	Manufacturer: Cree/Wolfspeed	Series: Z-Rec®	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Silicon Carbide (SiC)	Drain to Source Voltage (Vdss): 1700V (1.7kV)	Current - Continuous Drain (Id) @ 25°C: 325A (Tc)	Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V	Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)	Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V	Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V	Power - Max: 1760W	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Package / Case: Module	Supplier Device Package: Module
CAS325M12HM2	Cree/Wolfspeed	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 444A MODULE	In Stock419 More on Order	Manufacturer: Cree/Wolfspeed	Series: Z-REC™	FET Type: 2 N-Channel (Half Bridge)	FET Feature: Silicon Carbide (SiC)	Drain to Source Voltage (Vdss): 1200V (1.2kV)	Current - Continuous Drain (Id) @ 25°C: 444A (Tc)	Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V	Vgs(th) (Max) @ Id: 4V @ 105mA	Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 3000W	Operating Temperature: 175°C (TJ)	Mounting Type: -	Package / Case: Module	Supplier Device Package: Module
SSM6N7002KFU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.3A	In Stock111,097 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 300mA	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V	Power - Max: 285mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
SSM6N7002CFU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.17A US6	In Stock44,586 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 170mA	Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V	Power - Max: 285mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
VT6M1T2CR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.1A VMT6	In Stock24,837 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate, 1.2V Drive	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V	Power - Max: 120mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-SMD, Flat Leads	Supplier Device Package: VMT6
DMC2400UV-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563	In Stock34,435 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA	Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V	Power - Max: 450mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
EM6K34T2CR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.2A EMT6	In Stock134,493 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 0.9V Drive	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 200mA	Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 800mV @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V	Power - Max: 120mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: EMT6
NX3020NAKS,115	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.18A 6TSSOP	In Stock44,952 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 180mA	Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V	Power - Max: 375mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: 6-TSSOP
2N7002PV,115	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT-666	In Stock5,960 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 350mA	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V	Power - Max: 330mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
SSM6N15AFU,LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A 2-2J1C	In Stock19,351 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V	Power - Max: 300mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: US6
DMN65D8LDW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.18A SOT363	In Stock269,210 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 180mA	Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V	Power - Max: 300mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
UM6K33NTN	Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.2A UMT6	In Stock5,114 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate, 1.2V Drive	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 200mA	Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V	Power - Max: 120mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: UMT6
DMN63D8LV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.26A SOT563	In Stock97,195 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 260mA	Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V	Power - Max: 450mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
DMN63D8LDWQ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.22A SOT363	In Stock4,763 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 220mA	Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V	Power - Max: 300mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
DMC2700UDM-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT26	In Stock558,213 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A	Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V	Power - Max: 1.12W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-23-6	Supplier Device Package: SOT-26
NX3020NAKV,115	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.2A SOT666	In Stock207,671 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 200mA	Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V	Power - Max: 375mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
FC6946010R	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.1A SSMINI6	In Stock50,811 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V	Power - Max: 125mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F3-B
FC6943010R	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A SSMINI6	In Stock11,768 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V	Power - Max: 125mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SSMini6-F3-B
NX138BKSX	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 210MA 6TSSOP	In Stock3,949 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)	Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V	Power - Max: 320mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: 6-TSSOP
2N7002PS,125	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.32A 6TSSOP	In Stock18,496 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 320mA	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V	Power - Max: 420mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: 6-TSSOP
NX3008NBKV,115	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.4A SOT666	In Stock14,672 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 400mA	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V	Power - Max: 500mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
DMP2200UDW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.9A SOT363	In Stock54,120 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 900mA	Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V	Power - Max: 450mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
NTZD3154NT5G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.54A SOT563	In Stock15,388 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 540mA	Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V	Power - Max: 250mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563-6
SSM6N44FE,LM	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A ES6	In Stock58,351 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA	Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V	Power - Max: 150mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: ES6 (1.6x1.6)
PMGD780SN,115	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.49A 6TSSOP	In Stock18,198 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 490mA	Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V	Power - Max: 410mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: 6-TSSOP
NX3008PBKV,115	Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 0.22A SOT666	In Stock21,862 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 220mA	Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V	Power - Max: 500mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-666
DMN3190LDW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 1A SOT363	In Stock489,144 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1A	Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V	Power - Max: 320mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
DMN62D0UDW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A	In Stock25,198 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 350mA	Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V	Power - Max: 320mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363