FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7314PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5.3A 8-SOIC	In Stock141 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.3A	Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7316PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8-SOIC	In Stock507 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.9A	Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7317PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8-SOIC	In Stock373 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A	Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7319PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8SOIC	In Stock472 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7325PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 7.8A 8-SOIC	In Stock238 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 7.8A	Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7328PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 8A 8-SOIC	In Stock156 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8A	Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7329PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 9.2A 8-SOIC	In Stock660 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 9.2A	Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7331PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7A 8-SOIC	In Stock273 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 7A	Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7341PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 4.7A 8-SOIC	In Stock593 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 4.7A	Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7342PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 55V 3.4A 8-SOIC	In Stock386 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 3.4A	Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7343PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 55V 8-SOIC	In Stock615 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A	Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7379PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC	In Stock427 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A	Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V	Power - Max: 2.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7389PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC	In Stock284 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	Power - Max: 2.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF8910PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 8-SOIC	In Stock325 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 10A	Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.55V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF9910PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A/12A 8-SOIC	In Stock392 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 10A, 12A	Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.55V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF9952PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC	In Stock436 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A	Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF9953PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A 8-SOIC	In Stock476 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 2.3A	Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF9956PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 8-SOIC	In Stock386 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.5A	Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
TPC8207(TE12L,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6A 8-SOP	In Stock323 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6A	Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V	Vgs(th) (Max) @ Id: 1.2V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V	Power - Max: 450mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.173", 4.40mm Width)	Supplier Device Package: 8-SOP (5.5x6.0)
TPCF8201(TE85L,F,M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3A VS-8	In Stock260 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3A	Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V	Power - Max: 330mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SMD, Flat Lead	Supplier Device Package: VS-8 (2.9x1.5)
MMDF2P02HDR2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.3A 8-SOIC	In Stock370 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.3A	Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
MMDF2N02ER2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 3.6A 8-SOIC	In Stock518 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 3.6A	Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
NTMD2C02R2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8SOIC	In Stock385 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A	Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V	Power - Max: 2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
NTMD2P01R2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 16V 2.3A 8SOIC	In Stock389 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 16V	Current - Continuous Drain (Id) @ 25°C: 2.3A	Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V	Power - Max: 710mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SOIC
NTQD6866R2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.7A 8TSSOP	In Stock589 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.7A	Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V	Power - Max: 940mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
NTQD6968NR2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6.2A 8TSSOP	In Stock296 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6.2A	Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V	Power - Max: 1.39W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
NTTD1P02R2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.45A 8MICRO	In Stock238 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.45A	Rds On (Max) @ Id, Vgs: 160mOhm @ 1.45A, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 16V	Power - Max: 500mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Supplier Device Package: Micro8™
PMWD15UN,518	NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 11.6A 8TSSOP	In Stock344 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 11.6A	Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V	Power - Max: 4.2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
PMWD16UN,518	NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 9.9A 8TSSOP	In Stock514 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 9.9A	Rds On (Max) @ Id, Vgs: 19mOhm @ 3.5A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V	Power - Max: 3.1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
PMWD19UN,518	NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5.6A 8TSSOP	In Stock365 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.6A	Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V	Power - Max: 2.3W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP